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Features and specifications:

  • Type: Bi-Polar NPN epitaxial silicon Transistor
  • DC Current Gain (hFE):110-400
  • Collector current (IC): 700mA
  • Collector Base Voltage (VCB): 0 V
  • Collector-Emitter Voltage (VCE): 20V
  • Emitter Base Voltage (VEB): 5V
  • Maximum Power dissipation: 1W
  • Junction temperature: 150⁰C
  • Current gain-bandwidth product: 100MHz
  • Available in TO-92 Package


Applications and uses:

  • Class B Amplifiers
  • Push-pull circuits
  • Switch for small loads
  • Amplifying low gain signals to high gain




S8050 - NPN Transistor

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