Features and specifications:
Type: Bi-Polar NPN epitaxial silicon Transistor
DC Current Gain (hFE):110-400
Collector current (IC): 700mA
Collector Base Voltage (VCB): 0 V
Collector-Emitter Voltage (VCE): 20V
Emitter Base Voltage (VEB): 5V
Maximum Power dissipation: 1W
Junction temperature: 150⁰C
Current gain-bandwidth product: 100MHz
Available in TO-92 Package
 
Applications and uses:
Class B Amplifiers
Push-pull circuits
Switch for small loads
Amplifying low gain signals to high gain
 
Datasheet