2N5551 Transistor Explained / Description:
2N5551 is a general purpose NPN transistor built to use in high voltage circuits. The max collector to emitter voltage is 160V and collector to base voltage is 180V due to which it can be easily used in circuit using under 160 volts. The max output load this transistor can handle is 600mA and the max collector dissipation is 625mW. The transistor is built to use in general purpose applications therefore it can be used for amplification and switching.
 
Features / technical specifications:
 
Transistor Type: NPN
Max Collector Current(IC): 6A or 600mA
Max Collector-Emitter Voltage (VCE): 160V
Max Collector-Base Voltage (VCB): 180V
Max Emitter-Base Voltage (VBE): 6V
Max Collector Dissipation (Pc): 625 mW
Max Transition Frequency (fT): 100 MHz
Minimum & Maximum DC Current Gain (hFE): 80 – 250
Max Storage & Operating temperature Should be: -55 to +150 Centigrade