top of page

Characteristics of 2SB649 Transistor

  • Type - PNP
  • Collector-Emitter Voltage: -120 V
  • Collector-Base Voltage: -180 V
  • Emitter-Base Voltage: -5 V
  • Collector Current: -1.5 A
  • Collector Dissipation - 20 W
  • DC Current Gain (hfe) - 60 to 320
  • Transition Frequency - 140 MHz
  • Operating and Storage Junction Temperature Range -55 to +150 °C

 

2SB649 Bipolar PNP Transistor

USh500Price

    Contact Us

    Grand Plaza Hotel Building , 1st Floor

    Room L15, Mengo Hill Road

    P.O Box 36802 Kampala.

    info@bbiri-centre.com 

    • X
    • White Facebook Icon

    .

    We Accept

    momo.png

    © 2021-2025 Bbiri Applied ICT Centre Limited              

    bottom of page