Characteristics of 2SB649 Transistor

  • Type - PNP
  • Collector-Emitter Voltage: -120 V
  • Collector-Base Voltage: -180 V
  • Emitter-Base Voltage: -5 V
  • Collector Current: -1.5 A
  • Collector Dissipation - 20 W
  • DC Current Gain (hfe) - 60 to 320
  • Transition Frequency - 140 MHz
  • Operating and Storage Junction Temperature Range -55 to +150 °C

 

2SB649 Bipolar PNP Transistor

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