Characteristics of 2SB649 Transistor
- Type - PNP
- Collector-Emitter Voltage: -120 V
- Collector-Base Voltage: -180 V
- Emitter-Base Voltage: -5 V
- Collector Current: -1.5 A
- Collector Dissipation - 20 W
- DC Current Gain (hfe) - 60 to 320
- Transition Frequency - 140 MHz
- Operating and Storage Junction Temperature Range -55 to +150 °C
2SB649 Bipolar PNP Transistor
USh500Price