Characteristics of 2SB649 Transistor
Type - PNP
Collector-Emitter Voltage: -120 V
Collector-Base Voltage: -180 V
Emitter-Base Voltage: -5 V
Collector Current: -1.5 A
Collector Dissipation - 20 W
DC Current Gain (hfe) - 60 to 320
Transition Frequency - 140 MHz
Operating and Storage Junction Temperature Range -55 to +150 °C