This Insulated Gate Bipolar Transistor (IGBT) features a robust and
cost effective Field Stop (FS) Trench construction, and provides
superior performance in demanding switching application.
 
Marking Code: 75N65
Type of IGBT Channel: N
 
Absolute Maximum Ratings
Pc ⓘ - Maximum Power Dissipation: 265 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 650 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic| ⓘ - Maximum Collector Current: 75 A @25℃
Tj ⓘ - Maximum Junction Temperature: 175 ℃
 
Typical Applications
• Solar Inverters
• Uninterruptible Power Supplies (UPS)
• Welding