Characteristics of 2SB817 Transistor

  • Type - PNP
  • Collector-Emitter Voltage: -140 V
  • Collector-Base Voltage: -160 V
  • Emitter-Base Voltage: -6 V
  • Collector Current: -12 A
  • Collector Dissipation - 100 W
  • DC Current Gain (hfe) - 60 to 200
  • Transition Frequency - 15 MHz
  • Operating and Storage Junction Temperature Range -40 to +150 °C
  • Package - TO-3P

 

B817 Bipolar Transistor

USh2,500Price