BD649 technical specifications, attributes, and parameters.
BD649 Transistor, Npn, 100V, To-220;
Transistor Polarity: NPN;
Collector-Emitter Voltage V(Br)Ceo:100V;
Dc Collector Current:8A;
Power Dissipation Pd:62.5W;
Transistor Mounting:through Hole;
No. Of Pins:3Pins;
Product Range:- Rohs Compliant: Yes.
Transition Frequency ft:10MHz;
Power Dissipation Pd:62.5W;
DC Collector Current:8A;
DC Current Gain hFE:1500hFE;
Transistor Case Style:TO-220;
Operating Temperature Max:150°C;
Av Current Ic:8A;
Collector Emitter Saturation Voltage Vce(on):2V;
Continuous Collector Current Ic Max:8A;
Current Ic Continuous a Max:8A;
Current Ic hFE:3A;
Device Marking:BD649;
Full Power Rating Temperature:25°C;
Operating Temperature Min:-55°C;
Operating Temperature Range:-55°C to +150°C;
Power Dissipation Ptot Max:62.5W;
Termination Type:Through Hole
; Transistor Type:Darlington;
Voltage Vcbo:120V.