Description :
NPN silicon power transistors use UTC’s advanced technology to provide customers with high collector-base voltage, etc.
C2073 transistor is designed for use in general purpose Power amplifier, vertical output application.
 
Features
1. Collector-Emitter Voltage Vceo = 150V (Min)
2. DC Current Gain : hFE = 40-140 @Ic = 500mA
3. Complementary PNP 2SA940
 
C2073 Pinout :
1. Base
2. Collector
3. Emitter
4. Collector ( Case )
 
Absolute maximum ratings ( Ta=25°C )
1. Collector to Base Voltage : Vcbo = 150 V
2. Collector to Emitter Voltage : Vceo = 150 V
3. Emitter to Base Voltage : Vebo = 5.0 V
4. Collector Current : Ic = 1.5 A
5. Total Dissipation : Pc = 25 W
6. Junction Temperature : Tj = 150°C
7. Storage Temperatue : Tsg = -55 ~ +150°C