Characteristics of 2SD817 Transistor

  • Type - NPN
  • Collector-Emitter Voltage: 600 V
  • Collector-Base Voltage: 1500 V
  • Emitter-Base Voltage: 6 V
  • Collector Current: 1.5 A
  • Collector Dissipation - 50 W
  • DC Current Gain (hfe) - 10 to 30
  • Operating and Storage Junction Temperature Range -55 to +150 °C
  • Package - TO-3

 

D817 NPN Bipolar Transistor

USh2,500Price