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General Description

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been specially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for low voltage applications such as automotive, DC/ DC converters, and high efficiency switching for power management in portable and battery-operated products.



• 50A, 60V, RDS(on) = 0.022Ω @VGS = 10 V

• Low gate charge ( typical 31 nC)

• Low Crss ( typical 65 pF)

• Fast switching

• 100% avalanche tested

• Improved dv/dt capability

• 175°C maximum junction temperature rating




FQP50N06 60V N-Channel MOSFET

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