IRF3205 is Advanced HEXFET® Power MOSFETs utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.



• Advanced process technology

• Ultra low on-resistance

• Dynamic dv/dt rating

• Fast switching

• Fully avalanche rated



Number of Channels 1 Channel
Transistor Polarity N-Channel
Drain-Source Breakdown Voltage (Vds) 55V
Continuous Drain Current (Id) 110A
Drain-Source Resistance (Rds On) 8mOhms
Gate-Source Voltage (Vgs) 20V
Gate Charge (Qg) 146 nC
Operating Temperature Range -55 - 175°C
Power Dissipation (Pd) 200W

IRF3205 110AN-Channel MOSFET