IRF540 third generation power MOSFETs provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220AB package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 W.

 

Features

• Dynamic dV/dt rating

• Repetitive avalanche rated

• Fast switching

• Ease of paralleling

• Simple drive requirements

• Compliant to RoHS directive 2002/95/EC

 

Detailed Specifications

 

Number of Channels 1 Channel
Transistor Polarity N-Channel
Drain-Source Breakdown Voltage (Vds) 100V
Continuous Drain Current (Id) 33A
Drain-Source Resistance (Rds On) 44mOhms
Gate-Source Voltage (Vgs) 20V
Gate Charge (Qg) 71 nC
Operating Temperature Range -55 - 175°C
Power Dissipation (Pd) 130W

IRF540N N-Channel MOSFET 33A

USh5,000Price