IRF540 third generation power MOSFETs provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220AB package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 W.
Features
• Dynamic dV/dt rating
• Repetitive avalanche rated
• Fast switching
• Ease of paralleling
• Simple drive requirements
• Compliant to RoHS directive 2002/95/EC
Detailed Specifications
Number of Channels | 1 Channel |
Transistor Polarity | N-Channel |
Drain-Source Breakdown Voltage (Vds) | 100V |
Continuous Drain Current (Id) | 33A |
Drain-Source Resistance (Rds On) | 44mOhms |
Gate-Source Voltage (Vgs) | 20V |
Gate Charge (Qg) | 71 nC |
Operating Temperature Range | -55 - 175°C |
Power Dissipation (Pd) | 130W |
IRF540N N-Channel MOSFET 33A
USh5,000Price