IRF540 third generation power MOSFETs provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220AB package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 W.
 
Features
• Dynamic dV/dt rating
• Repetitive avalanche rated
• Fast switching
• Ease of paralleling
• Simple drive requirements
• Compliant to RoHS directive 2002/95/EC
 
Detailed Specifications
 
Number of Channels
1 Channel
Transistor Polarity
N-Channel
Drain-Source Breakdown Voltage (Vds)
100V
Continuous Drain Current (Id)
33A
Drain-Source Resistance (Rds On)
44mOhms
Gate-Source Voltage (Vgs)
20V
Gate Charge (Qg)
71 nC
Operating Temperature Range
-55 - 175°C
Power Dissipation (Pd)
130W