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IRF540 third generation power MOSFETs provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220AB package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 W.



• Dynamic dV/dt rating

• Repetitive avalanche rated

• Fast switching

• Ease of paralleling

• Simple drive requirements

• Compliant to RoHS directive 2002/95/EC


Detailed Specifications


Number of Channels1 Channel
Transistor PolarityN-Channel
Drain-Source Breakdown Voltage (Vds)100V
Continuous Drain Current (Id)33A
Drain-Source Resistance (Rds On)44mOhms
Gate-Source Voltage (Vgs)20V
Gate Charge (Qg)71 nC
Operating Temperature Range-55 - 175°C
Power Dissipation (Pd)130W

IRF540N N-Channel MOSFET 33A

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