Description:
The IRF540NPBF is 100V single N channel HEXFET power MOSFET in 3 pin TO-220AB package. It utilizes advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit combined with fast switching speed and ruggedized device design that HEXFET power MOSFETs which are well known for designers with extremely efficient and reliable devices to use in a wide variety of applications.
Specifications:
Technology: | Si |
Mounting Style: | Through Hole |
Transistor Polarity: | N-Channel |
Number of Channels: | 1 Channel |
Vds - Drain-Source Breakdown Voltage: | 100 V |
Id - Continuous Drain Current: | 33 A |
Rds On - Drain-Source Resistance: | 44 mOhms |
Vgs - Gate-Source Voltage: | - 20 V, + 20 V |
Vgs th - Gate-Source Threshold Voltage: | 2 V |
Qg - Gate Charge: | 47.3 nC |
Minimum Operating Temperature: | - 55 C |
Maximum Operating Temperature: | + 175 C |
Pd - Power Dissipation: | 140 W |
Channel Mode: | Enhancement |
Packaging: | Tube |
IRF540NPBF TO-220 100V 33A N-Channel MOSFET
USh5,000Price