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IRF9540N P-Channel MOSPHET

IRF9540N is new generation of high voltage MOSFET family that is utilizing an advanced charge balance mechanism for outstanding low on-resistance and lower gate charge performance. This advanced technology has been tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate and higher avalanche energy. It is very suitable for various AC/DC power conversion in switching mode operation for system miniaturization and higher efficiency.



• Dynamic dV/dt rating

• 100% avalanche rated

• Fast switching

• Ease of paralleling

• New high voltage benchmark

• P-Channel

• Advanced process technology


Detailed Specifications:-

Number of Channels1 Channel
Transistor PolarityP-Channel
Drain-Source Breakdown Voltage (Vds)-100V
Continuous Drain Current (Id)-23A
Drain-Source Resistance (Rds On)0.117Ohms
Gate-Source Voltage (Vgs)20V
Gate Charge (Qg)97 nC
Operating Temperature Range-55 - 175°C
Power Dissipation (Pd)140W

IRF9540N P-Channel MOSFET

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