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Product Specifications

Product AttributeAttribute ValueSearch
Alternate Mfr Part Number463634 
Collector Current16 A 
Collector to Base Voltage250 V 
Collector to Emitter Voltage250 V 
ConfigurationCommon Base 
Dimensions10.28 x 4.82 x 15.75 mm 
Emitter to Base Voltage5 V 
Height0.62" (15.75mm) 
Length0.404" (10.28mm) 
MaterialSi 
Maximum Operating Temperature+150 °C 
Minimum Operating Temperature-65 °C 
Mounting TypeThrough Hole 
Number of Elements per Chip1 
Number of Pins3 
Operating Frequency30 MHz 
Package TypeTO-220 
PolarityNPN 
Power Dissipation50 W 
Primary TypeSi 
Product HeaderComplementary Silicon Plastic Power Transistor 
Resistance, Thermal, Junction to Case2.5 °C/W 
SeriesTransistor Series 
Temperature Operating Range-65 to +150 °C 
Transistor TypeNPN 
TypePower 
Voltage, Breakdown, Collector to Emitter250 V 
Voltage, Collector to Emitter, Saturation0.5 V 
Width0.19" (4.82mm) 

Datasheet

 

MJE15032 (NPN) Silicon Power Transistor

USh2,000Price
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