MJE340 Transistor Explained / Description:

MJE340 is a TO-126 package NPN silicon BJT transistor designed for high voltage applications. The Maximum collector-emitter and collector-base voltage of the transistor are up to 300V which makes it ideal to use in a wide variety of high voltage applications. The device can be used with any general high voltage switching application for the max load of 0.5A or 500mA DC. Additionally, it can also be used for switching in low-power and battery-operated applications.

MJE340 is not only limited to use for the above-mentioned purposes however it can also be used for amplification purposes, also the 20W collector dissipation makes it ideal to use in many general-purpose audio amplification purposes.

 

Features / Technical Specifications:

  • Package Type: TO-126
  • Transistor Type:  NPN
  • Max Collector Current(IC): 5A
  • Max Collector-Emitter Voltage (VCE): 300V
  • Max Collector-Base Voltage (VCB): 300V
  • Max Emitter-Base Voltage (VEBO): 3V
  • Max Collector Dissipation (Pc): 20 Watt
  • Max Transition Frequency (fT): 4 MHz
  • Minimum & Maximum DC Current Gain (hFE): 30– 240
  • Max Storage & Operating temperature Should Be: -65 to +150 Centigrade

 

Applications:

Linear Power Supplies

Switching Power Supplies

Inverter Circuits

UPS Circuits

Battery Charger Applications

Motor Controllers

Audio Amplification

DC High Voltage Switching

 

MJE340 Medium-Power NPN Silicon Transistor

USh1,000Price